This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode...
Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features · Maximum Junction Temperature:T,=175℃ ·...
STP20N10 IGBT Transistor
Stp20n10 N - Channel Enhancement Mode Power Mos Transistor Features ■ Typical Rds(On) = 0.09 Ω ■ Avalanche Rugged Technology ■ 100% Avalanche Tested ■ Repetitive Avalanche Data At 100oc ■ Low Gate Charge ■ High Current Capability ■ 175oc Operating Temperature ■ Application...
Description The ISL9R3060G2, ISL9R3060P2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended...
FMU34R Sanken Transistor
20.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers Features Low forward voltage drop Fast switching for high efficiency High current capability Case: Heatsink TO-3PN open metal package High surge current capability Weight: 0.61 gram approximately Polarity: As marked on...
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