Product Overview
FGH60N60SMD IGBT Transistor
Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
· Maximum Junction Temperature:T,=175℃
· Positive Temperaure Co-eficient for easy Parallel Operating
· High Current Capability
· Low Saturation Voltage: VcE(sa)=1.9V(Typ.)@ lc=60A
· High Input Impedance
· Fast Switching: EoFF =7.5 J/A
· Tightened Parameter
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
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FGH60N60SMD IGBT Transistor
