STP20N10 IGBT Transistor

Product Details

Stp20n10 N - Channel Enhancement Mode Power Mos Transistor

Features
■ Typical Rds(On) = 0.09 Ω
■ Avalanche Rugged Technology
■ 100% Avalanche Tested
■ Repetitive Avalanche Data At 100oc
■ Low Gate Charge
■ High Current Capability
■ 175oc Operating Temperature
■ Application Oriented


Applications
■ High Current, High Speed Switching
■ Solenoid And Relay Drivers
■ Regulators
■ Dc-Dc & Dc-Ac Converters
■ Motor Control, Audio Amplifiers
■ Automotive Environment (Injection, Abs, Air-Bag, Lampdrivers, Etc.)